DocumentCode :
82197
Title :
On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes
Author :
Shaofei Zhang ; Connie, A.T. ; Laleyan, David A. ; Hieu Pham Trung Nguyen ; Qi Wang ; Jun Song ; Ishiang Shih ; Zetian Mi
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Volume :
50
Issue :
6
fYear :
2014
fDate :
Jun-14
Firstpage :
483
Lastpage :
490
Abstract :
We have investigated the impact of surface recombination on the effective carrier injection efficiency and the Joule heating of axial InGaN/GaN nanowire light-emitting diodes (LEDs). The results reveal that the carrier injection efficiency of such devices is extremely low (<;10%), due to the severe carrier loss through nonradiative surface recombination. It is further observed that the thermal resistance of typical nanowire LEDs is comparable with, or lower than that of their planar counterparts, in spite of the reduced thermal conductivity of nanowires. The poor carrier injection efficiency, however, leads to significantly elevated junction temperatures for nanowire LEDs. We have further demonstrated, both theoretically and experimentally, that the carrier injection efficiency can be significantly improved in p-doped nanowires, due to the downward surface band bending, and in InGaN/GaN/AlGaN dot-in-a-wire core-shell nanoscale heterostructures, due to the superior carrier confinement offered by the large bandgap AlGaN shell. This paper offers important insight for the design and epitaxial growth of high-performance nanowire LEDs.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanoelectronics; optical design techniques; semiconductor heterojunctions; surface recombination; thermal conductivity; wide band gap semiconductors; InGaN-GaN-AlGaN; Joule heating; axial nanowire light emitting diodes; carrier confinement; carrier injection efficiency; carrier loss; dot-in-a-wire core-shell nanoscale heterostructures; downward surface band bending; epitaxial growth; high-performance nanowire LED; junction temperature; nonradiative surface recombination; p-doped nanowires; thermal conductivity; thermal property; thermal resistance; Gallium nitride; Light emitting diodes; Nanoscale devices; Radiative recombination; Thermal resistance; GaN; Joule heating; Nanowire; light emitting diode; surface recombination;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2014.2317732
Filename :
6799260
Link To Document :
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