• DocumentCode
    82200
  • Title

    Supply-Noise-Resilient Design of a BBPLL-Based Force-Balanced Wheatstone Bridge Interface in 130-nm CMOS

  • Author

    Van Rethy, J. ; Danneels, Hans ; De Smedt, Valentijn ; Dehaene, Wim ; Gielen, Georges E.

  • Author_Institution
    Dept. of Electr. Eng. (ESAT), KU Leuven, Leuven, Belgium
  • Volume
    48
  • Issue
    11
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    2618
  • Lastpage
    2627
  • Abstract
    An energy-efficient and supply- and temperature-resilient resistive sensor interface in 130-nm CMOS technology is presented. Traditionally resistive sensors are interfaced with a Wheatstone bridge and an amplitude-based analog-to-digital converter (ADC). However, both the unbalanced Wheatstone bridge and the ADC are highly affected by supply voltage variations, especially in smaller CMOS technologies with low supply voltages. As alternative to ratiometric measuring, this paper presents a force-balanced Wheatstone bridge interface circuit with a highly digital architecture that combines the advantage of energy-efficient sensing with highly improved overall PSRR and temperature resilience in one circuit. The prototyped circuit has a noise-frequency-independent PSRR of 52 dB, even for supply-noise amplitudes up to +10 dB FS. The maximum absolute output error in a supply voltage range of 0.85-1.15 V is only 0.7%, while the maximum absolute output error in a temperature range of 100°C is only 0.56% or 56 ppm/°C. The complete interface is prototyped in 130-nm CMOS and consumes 124.5 μW from a 1-V supply with a 10-kHz input bandwidth and 10.4-b resolution and 8.9-b linearity, resulting in a state-of-the-art sensor figure of merit of 13.03 pJ/bit-conversion.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; electric sensing devices; phase locked loops; ADC; BBPLL-based force-balanced Wheatstone bridge interface; CMOS; amplitude-based analog-to-digital converter; bandwidth 10 kHz; maximum absolute output error; power 124.5 muW; size 130 nm; supply-noise-resilient design; temperature-resilient resistive sensor interface; voltage 0.85 V to 1.15 V; Bridge circuits; CMOS integrated circuits; Noise; Radiation detectors; Voltage measurement; Voltage-controlled oscillators; Bang-bang phase-locked loop (BBPLL); Wheatstone bridge; dc autonulling; energy efficient; force-balancing; force-feedback; frequency/time-based; power-supply rejection ratio (PSRR); resistive sensor; sensor-to-digital conversion; supply-noise resilient; voltage-controlled oscillator (VCO);
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2013.2274831
  • Filename
    6578589