Systematic and rigorous extraction method of HBT small-signal model parameters

Author

Degachi, Louay ; Ghannouchi, Fadhel M.

Author_Institution

Electr. Eng. Dept., Ecole Polytechnique de Montreal, Canada

Volume

54

Issue

2

fYear

2006

Firstpage

682

Lastpage

688

Abstract

This paper presents a systematic and rigorous analytical parameter-extraction method for a heterojunction bipolar transistor (HBT) small-signal equivalent-circuit model. The proposed method relies exclusively on S-parameter measurements. Exact closed-form equations are used for the direct extraction of circuit elements. The method is characterized by its simplicity and ease of implementation. It is applied to predict the small-signal characteristics of transistors from different foundries. Excellent agreement between modeled and measured S-parameters is observed up to 20 GHz.

Keywords

heterojunction bipolar transistors; semiconductor device models; HBT small-signal model parameters; S-parameter measurements; analytical parameter-extraction method; exact closed-form equations; heterojunction bipolar transistors; small-signal equivalent-circuit model; Automation; Bipolar transistors; Capacitance measurement; Circuits; Electrical resistance measurement; Equations; Foundries; Heterojunction bipolar transistors; Parameter extraction; Temperature; Heterojunction bipolar transistor (HBT); parameter extraction; small-signal equivalent-circuit model;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.862661

Filename

1589492