DocumentCode :
822078
Title :
Transitions between intra-wall structures in Permalloy thin film
Author :
Guo, Yi-Min ; Zhu, Jian-Gang
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume :
28
Issue :
5
fYear :
1992
fDate :
9/1/1992 12:00:00 AM
Firstpage :
2919
Lastpage :
2921
Abstract :
Magnetization structures of the two-dimensional 180° domain walls in Permalloy thin films are studied by numerical micromagnetic simulation. It is found that, in a film with a thickness between 300 and 500 Å, both the LaBonte and the Neel wall structures are energetically stable. Transitions between the two stable wall structures are studied by applying a square pulse field in the film plane and perpendicular to the wall. It is found that the transition from the LaBonte wall structure to the Neel wall structure essentially depends on the area of the field pulse. The results also show that a significant domain wall displacement is associated with the transition from the LaBonte wall structure to the Neel wall structure. It is argued that the transitions between the wall structures could change the local pinning environment and cause unexpected wall motion
Keywords :
Permalloy; ferromagnetic properties of substances; magnetic domain walls; magnetic thin films; LaBonte wall structure; Neel wall structures; Permalloy thin film; domain wall displacement; local pinning environment; magnetic film; magnetisation structures; micromagnetic simulation; square pulse field; transitions between intra-wall structures; wall motion; Anisotropic magnetoresistance; Damping; Equations; Magnetic domain walls; Magnetic films; Magnetic properties; Micromagnetics; Numerical simulation; Saturation magnetization; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.179672
Filename :
179672
Link To Document :
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