In-plane magnetic anisotropies in polycrystalline Ni films induced by Xe bombardment during growth

Author

Farle, M. ; Saffari, H. ; Lewis, W.A. ; Kay, E. ; Hagstrom, S.B.

Author_Institution

Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA

Volume

28

Issue

5

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2940

Lastpage

2942

Abstract

250 to 1500 Å thin Ni films were ion beam sputtered onto a fused quartz substrate with simultaneous bombardment by Xe ions of 100 eV. Hysteresis loops were recorded ex situ by the longitudinal magnetooptic Kerr effect. A maximum in-plane uniaxial anisotropy field of 12 kA/m (151 Oe) was found in 750-Å-thick films that were deposited with a flux ratio of Xe ions to Ni atoms of 0.12. The easy axis of magnetization was found to lie perpendicular to the plane of incidence of the secondary ions. Films showing the strong uniaxial in-plane anisotropy were almost completely (111) textured normal to the film plane. A maximum lattice expansion of 0.5% normal to the film plane was observed for these films

Keywords

Kerr magneto-optical effect; ferromagnetic properties of substances; induced anisotropy (magnetic); ion beam effects; magnetic hysteresis; magnetic thin films; nickel; sputter deposition; sputtered coatings; (111) textured; 100 eV; 250 to 1500 angstrom; Ni films; Xe bombardment; easy axis of magnetization; fused quartz substrate; hysteresis loops; in-plane uniaxial anisotropy field; ion beam sputtered; longitudinal magnetooptic Kerr effect; magnetic anisotropy; magnetic films; polycrystalline; Anisotropic magnetoresistance; Atomic layer deposition; Ion beams; Kerr effect; Magnetic anisotropy; Magnetic films; Magnetic hysteresis; Magnetooptic effects; Magnetooptic recording; Substrates;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.179679

Filename

179679