• DocumentCode
    822175
  • Title

    Preparation of soft magnetic Fe-N films by ion beam deposition method with strict control of plasma potential

  • Author

    Nakagawa, Shigeki ; Hamaguchi, Takehiko ; Naoe, Masahiko

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • Volume
    28
  • Issue
    5
  • fYear
    1992
  • fDate
    9/1/1992 12:00:00 AM
  • Firstpage
    2946
  • Lastpage
    2948
  • Abstract
    An ion beam deposition apparatus with the facing targets type of ion source (FTIS) was used to deposit ion species with proper kinetic energy and particularly to prepare soft magnetic Fe-N films. The coercivity was varied by strict control of the nitration degree of Fe-N films by adjusting the NH3 partial pressure. The H c and the relative permeability μr could be controlled by adjusting the plasma potential Vp. Further improvement of soft magnetic properties of the films, such as decrease of Hc and increase of μr, has been attained by a post-annealing process. For example, Fe-N films prepared at PNH3 of 8 mPa and Vp of 45 V and postannealed at 150°C exhibited 4 πMs, Hc, and μr of 19 kG, 2 Oe, and 2000, respectively. Consequently, the Fe-N films prepared by FTIS may be useful as the magnetic core layer for a thin-film-type recording head with high performance
  • Keywords
    annealing; coercive force; ferromagnetic properties of substances; iron alloys; magnetic hysteresis; magnetic permeability; magnetic thin films; sputter deposition; sputtered coatings; coercivity; facing targets ion source; film preparation; ion beam deposition method; magnetic core layer; plasma potential; post-annealing; relative permeability; soft magnetic Fe-N films; soft magnetic properties; thin-film-type recording head; Coercive force; Ion beams; Ion sources; Kinetic energy; Magnetic films; Magnetic properties; Permeability; Plasma properties; Pressure control; Soft magnetic materials;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.179681
  • Filename
    179681