Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs

Author

Zhu, Chendong ; Liang, Qingqing ; Al-Huq, Ragad Amin ; Cressler, John D. ; Lu, Yuan ; Chen, Tianbing ; Joseph, Alvin J. ; Niu, Guofu

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

5

Issue

1

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

142

Lastpage

149

Abstract

A robust, time-dependent methodology is used to investigate impact-ionization-induced mixed-mode reliability stress (the simultaneous application of high J_E and high V_CB) in advanced SiGe HBTs. We present comprehensive stress data on second-generation 120-GHz SiGe HBTs, and use specially designed test structures with variable emitter-to-shallow trench spacing to shed light on the resultant damage mechanisms. We also explore the impact of mixed-mode stress on low frequency noise, ac performance, high-temperature device characteristics, and employ two-dimensional calibrated MEDICI simulations using the hot carrier injection current technique to better understand the physical damage locations.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; impact ionisation; millimetre wave bipolar transistors; semiconductor device reliability; 120 GHz; SiGe; damage mechanisms; heterojunction bipolar transistor; hot carrier damage; hot carrier injection current technique; impact-ionization-induced mixed-mode reliability degradation; mixed-mode stress; two-dimensional calibrated MEDICI simulation; variable emitter-to-shallow trench spacing; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Impact ionization; Isolation technology; Low-frequency noise; Silicon germanium; Stress; Testing; Heterojunction bipolar transistor; hot carrier damage; impact ionization; mixed-mode stress; reliability; silicon-germanium;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2005.843835

Filename

1435398