DocumentCode :
822229
Title :
Temperature and current dependences of reliability degradation of buried heterostructure semiconductor lasers
Author :
Huang, Jia-Sheng
Author_Institution :
Div. of Emcore, Ortel, Alhambra, CA, USA
Volume :
5
Issue :
1
fYear :
2005
fDate :
3/1/2005 12:00:00 AM
Firstpage :
150
Lastpage :
154
Abstract :
Failure times of semiconductor lasers are usually lengthy under normal aging conditions. Determination of failure times typically involves extrapolation using a sublinear or linear model. It becomes increasingly difficult to experimentally determine activation energy and current exponent since data based on lower temperatures and lower stress currents are required. In this paper, the temperature and current dependences of 1310-nm buried heterostructure (BH) InP lasers were studied. We show that the activation energy of 1310-nm BH lasers based on life test data at 70°C-100°C is higher than the value of 0.4 eV suggested by Telcordia. The activation energies estimated by sublinear and linear models were 0.87 and 0.55 eV, respectively. We also show that the current exponents are 1.4 and 1.0, respectively, for sublinear and linear models. We discuss the implications of the reliability results in field reliability predictions.
Keywords :
III-V semiconductors; indium compounds; laser reliability; semiconductor lasers; 1310 nm; 70 to 100 C; InP; activation energy; buried heterostructure semiconductor lasers; current exponent; failure time; linear model; normal aging condition; reliability degradation; reliability extrapolation; reliability prediction; sublinear model; Aging; Degradation; Extrapolation; Indium phosphide; Laser modes; Life testing; Semiconductor device reliability; Semiconductor lasers; Stress; Temperature dependence; Activation energy; buried heterostructure; current exponent; life test; reliability extrapolation; semiconductor laser;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2005.843834
Filename :
1435399
Link To Document :
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