• DocumentCode
    822288
  • Title

    Effect of CMOS technology scaling on thermal management during burn-in

  • Author

    Semenov, Oleg ; Vassighi, Arman ; Sachdev, Manoj ; Keshavarzi, Ali ; Hawkins, C.F.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Waterloo, Ont., Canada
  • Volume
    16
  • Issue
    4
  • fYear
    2003
  • Firstpage
    686
  • Lastpage
    695
  • Abstract
    Burn-in is a quality improvement procedure challenged by the high leakage currents that are rapidly increasing with IC technology scaling. These currents are expected to increase even more under the new burn-in environments leading to higher junction temperatures, possible thermal runaway, and yield loss during burn-in. The authors estimate the increase in junction temperature with technology scaling. Their research shows that under normal operating conditions, the junction temperature is increasing 1.45×/generation. The increase in junction temperature under the burn-in condition was found to be exponential. The range of optimal burn-in voltage and temperature is reduced significantly with technology scaling.
  • Keywords
    CMOS integrated circuits; circuit optimisation; integrated circuit modelling; integrated circuit reliability; integrated circuit yield; leakage currents; thermal management (packaging); thermal resistance; Arrhenius model; CMOS technology scaling; IC technology scaling; junction temperature; optimal burn-in temperature; optimal burn-in voltage; optimal stressed temperature; optimization procedure; quality improvement; thermal management; thermal resistance models; thermal runaway; time-dependent dielectric breakdown models; voltage acceleration factor models; yield loss; CMOS logic circuits; CMOS technology; Clocks; Frequency; Integrated circuit technology; Leakage current; Microprocessors; Technology management; Temperature; Thermal management;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2003.818985
  • Filename
    1243983