Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics

Author

Meney, A.T. ; Prins, A.D. ; Phillips, A.F. ; Sly, J.L. ; Reilly, E. P O ; Dunstan, D.J. ; Adams, A.R. ; Valster, A.

Author_Institution

Dept. of Phys., Surrey Univ., Guildford, UK

Volume

1

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

697

Lastpage

706

Abstract

Using hydrostatic pressure techniques, we have obtained new energies for the X-minima, L-minima and band offsets in GaInP-AlGaInP. Theoretical calculations of the threshold current density in bulk and strained quantum-well visible lasers are shown to be in good agreement with experimental results, obtained as a function of both temperature and hydrostatic pressure. Our results show that heterobarrier leakage current is a dominant limiting factor in the performance at shorter wavelength (~635 nm) operation, but is of less significance for longer wavelength (~675 nm) operation

Keywords

III-V semiconductors; aluminium compounds; band structure; current density; energy gap; gallium compounds; indium compounds; laser beams; photoluminescence; quantum well lasers; semiconductor heterojunctions; valence bands; 635 nm; 675 nm; AlGaInP; GaInP-AlGaInP; L-minima; X-minima; band offsets; band structure; disordered semiconductor; heterobarrier leakage current; hydrostatic pressure techniques; limiting factor; strained quantum-well visible lasers; threshold current density; visible-laser characteristics; Capacitive sensors; Electrons; Extrapolation; Laser theory; Photonic band gap; Pressure measurement; Quantum well lasers; Temperature dependence; Temperature distribution; Threshold current;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.401259

Filename

401259