DocumentCode :
822408
Title :
Device model approximation using 2N trees
Author :
Lewis, David M.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Volume :
9
Issue :
1
fYear :
1990
fDate :
1/1/1990 12:00:00 AM
Firstpage :
30
Lastpage :
38
Abstract :
The application of 2N trees to device model approximation is described. The domain of the device model function is partitioned using a 2N tree, with smaller partitions where the function is more nonlinear. The function value associated with each corner of each partition is precomputed, and the function is evaluated by a given point by interpolation over the smallest partition that includes that point. This technique has the advantage that highly nonlinear functions can be modeled with modest space and time requirements. Exponential functions, such as the subthreshold behavior of FETs, can be accurately modeled. Accuracy levels of 1% are possible down to currents of 10-11 A. Table generation time is small; it is only a few minutes for a MOSFET model including subthreshold effects. This algorithm is especially suited for application to a hardware-accelerated device model evaluator. The design of a prototype that is capable of performing a device model evaluation of a SPICE level-2 model including subthreshold effects in 1 μs is described. Less detailed models, such as timing simulator models, can be evaluated in as little as 0.2 μs
Keywords :
circuit CAD; field effect transistors; insulated gate field effect transistors; semiconductor device models; trees (mathematics); 2N trees; FETs; MOSFET model; SPICE level-2 model; device model approximation; function value; hardware-accelerated device model evaluator; interpolation; nonlinear functions; subthreshold effects; timing simulator models; Circuit simulation; FETs; Hardware; Interpolation; MOSFET circuits; Performance evaluation; Prototypes; SPICE; Table lookup; Timing;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.45854
Filename :
45854
Link To Document :
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