DocumentCode
822418
Title
Loss calculations in transistorized parallel resonant converters operating above resonance
Author
Bhat, A.K.S. ; Swamy, Mahesh M.
Author_Institution
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
Volume
4
Issue
4
fYear
1989
fDate
10/1/1989 12:00:00 AM
Firstpage
391
Lastpage
401
Abstract
The optimum operating point under certain constraints for a parallel resonant converter (PRC) operating above resonance is obtained. A systematic way to calculate losses in a PRC operating above resonance is presented and illustrated for bipolar and MOS power transistor switches. Experimental results obtained with prototype converters employing the above devices are given to support the theory. Both theory and experiments show that MOSFETs are better switching devices at a power level of about 1 kW
Keywords
bipolar transistor circuits; field effect transistor circuits; losses; power convertors; power transistors; semiconductor switches; 1 kW; MOSFETs; bipolar transistors; losses; optimum operating point; parallel resonant converters; power convertors; power transistor switches; resonance; switching devices; Hafnium; Inductors; MOSFETs; Partial response channels; Power transistors; Resonance; Resonant inverters; Snubbers; Switches; Thyristors;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/63.41766
Filename
41766
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