Zero-voltage-switching multiresonant technique-a novel approach to improve performance of high-frequency quasi-resonant converters

A novel multiresonant switching concept is proposed to overcome the limitations of high-frequency quasi-resonant converters. A novel family of zero-voltage-switching (ZVS) multiresonant converters is generated. The unique arrangement of the multiresonant network results in absorption of all major parasitic components in the resonant circuit, including transistor output capacitance, diode junction capacitance, and transfer leakage inductance. This allows the new converters to provide favorable switching conditions for all semiconductor devices. Experimental results show that ZVS multiresonant converters are superior to ZVS quasi-resonant converters due to their reduced transistor voltage stress and improved load range and stability