Title :
A new empirical large-signal HEMT model
Author :
Shirakawa, Kazuo ; Shimizu, Masahiko ; Kawasaki, Yosihiro ; Ohashi, Yoji ; Okubo, Naofumi
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
fDate :
4/1/1996 12:00:00 AM
Abstract :
We propose an empirical large-signal model of high electron mobility transistors (HEMTs). The bias-dependent data of small-signal equivalent circuit elements are obtained from S-parameters measured at various bias settings. And Cgs, Cgd, gm, and gds, are described as functions of Vgs and Vds. We included our large-signal model in a commercially available circuit simulator as a user-defined model and designed a 30/60-GHz frequency doubler. The fabricated doubler´s characteristics agreed well with the design calculations
Keywords :
S-parameters; equivalent circuits; frequency multipliers; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave frequency convertors; semiconductor device models; 60 GHz; HEMT; S-parameters; circuit simulator; equivalent circuit; frequency doubler; high electron mobility transistor; large-signal model; Capacitance; Curve fitting; Equations; Equivalent circuits; Frequency; HEMTs; Scattering parameters; Semiconductor process modeling; Solid modeling; Variable structure systems;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
