Title :
Optimum tensile-strained multiquantum-well structure of 630-nm band InGaAlP lasers for high temperature and reliable operation
Author :
Watanabe, Minoru ; Matsuura, Hatsumi ; Shimada, Naohiro ; Okuda, Hajime
Author_Institution :
Semicond. Group, Toshiba Corp., Kawasaki, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
An optimum structure of 630 nm-band InGaAlP tensile-strained multiquantum-well (MQW) laser diodes for high temperature and reliable operation has been discussed. Dependences of operation characteristics on well number, well width and tensile strain, have been investigated. From these results, it has been found that introducing tensile strain into well layers reduces threshold current, but it also reduces characteristic temperature. In addition, large tensile strain over a critical condition for lattice relaxation might cause inferior operation reliability. The authors have reached the conclusion that an MQW structure with four 80 Å InGaP wells, having a lattice mismatch of -0.75% is optimum for high temperature and reliable operation in the 630 mm-band
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser reliability; quantum well lasers; semiconductor device reliability; 630 nm; InGaAlP; InGaAlP lasers; InGaP; InGaP wells; MQW structure; critical condition; high temperature operation; laser diodes; lattice mismatch; lattice relaxation; operation characteristics; operation reliability; optimum structure; reliable operation; tensile strain; tensile-strained multiquantum-well structure; threshold current; well number; well width; Capacitive sensors; Chemical lasers; Laser stability; Lattices; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Tensile strain; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401261
