Title :
0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output
Author :
Krishnamurthy, K. ; Chow, J. ; Rodwell, M.J.W. ; Pullela, R.
Author_Institution :
GTRAN Inc., Newbury Park, CA, USA
Abstract :
An InP double hetero-junction bipolar transistor (DHBT) distributed power amplifier MMIC with 35 dB gain, 42 GHz bandwidth and 15 dBm output power is reported. This represents the highest power and largest gain reported over this bandwidth from a single chip HBT amplifier. A lumped preamplifier with a novel distributed output is used to obtain high gain and wide bandwidth at these power levels.
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MIMIC; distributed amplifiers; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; wideband amplifiers; 0.1 to 42 GHz; 35 dB; 42 GHz; InP; InP DHBT distributed amplifiers; broadband power amplifier; distributed output; distributed power amplifier MMIC; double hetero-junction bipolar transistor; lumped preamplifier; single chip HBT amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031020
