DocumentCode
822643
Title
0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output
Author
Krishnamurthy, K. ; Chow, J. ; Rodwell, M.J.W. ; Pullela, R.
Author_Institution
GTRAN Inc., Newbury Park, CA, USA
Volume
39
Issue
22
fYear
2003
Firstpage
1594
Lastpage
1595
Abstract
An InP double hetero-junction bipolar transistor (DHBT) distributed power amplifier MMIC with 35 dB gain, 42 GHz bandwidth and 15 dBm output power is reported. This represents the highest power and largest gain reported over this bandwidth from a single chip HBT amplifier. A lumped preamplifier with a novel distributed output is used to obtain high gain and wide bandwidth at these power levels.
Keywords
III-V semiconductors; MMIC power amplifiers; bipolar MIMIC; distributed amplifiers; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; wideband amplifiers; 0.1 to 42 GHz; 35 dB; 42 GHz; InP; InP DHBT distributed amplifiers; broadband power amplifier; distributed output; distributed power amplifier MMIC; double hetero-junction bipolar transistor; lumped preamplifier; single chip HBT amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20031020
Filename
1244114
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