Title :
A new compact model for monolithic transformers in silicon-based RFICs
Author :
Mayevskiy, Yevgeniy ; Watson, Adam ; Francis, Pascale ; Hwang, Kyuwoon ; Weisshaar, Andreas
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
fDate :
6/1/2005 12:00:00 AM
Abstract :
A new compact model for monolithic transformers on silicon substrates is presented. The new lumped-element equivalent circuit model employs transformer loops to represent skin and proximity effects including eddy current loss in the windings of the transformer. In addition to the self-resistances and self-inductances of the windings, the effects of the frequency-dependent mutual resistance and mutual inductance are included in the model. The new compact model has been applied to a stacked transformer on a 10-Ω·cm CMOS substrate. The extracted circuit model shows very good agreement with data obtained by full-wave electromagnetic simulation and measurement over the frequency range of 0.1-10GHz.
Keywords :
CMOS integrated circuits; eddy current losses; equivalent circuits; monolithic integrated circuits; radiofrequency integrated circuits; silicon; transformer windings; transformers; 0.1 to 10 GHz; 10 cm; CMOS substrate; Si; eddy current loss; frequency-dependent mutual inductance; frequency-dependent mutual resistance; full-wave electromagnetic simulation; lumped-element equivalent circuit model; monolithic transformers; proximity effects; radio frequency integrated circuit; self-inductances; self-resistances; silicon substrates; silicon-based RFIC; skin effects; transformer loops; Eddy currents; Equivalent circuits; Frequency; Inductance; Proximity effect; Radiofrequency integrated circuits; Semiconductor device modeling; Silicon; Skin; Transformers; Eddy currents; equivalent-circuit model; monolithic transformers; mutual resistance; radio frequency integrated circuit (RFIC); silicon substrate;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.850558
