Title :
High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz
Author :
Kumar, Vipin ; Lee, J.-W. ; Kuliev, A. ; Aktas, O. ; Schwindt, R. ; Birkhahn, R. ; Gotthold, D. ; Guo, S. ; Albert, B. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
MOCVD-grown 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on 6H-SiC substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.28 A/mm, peak extrinsic transconductance of 310 mS/mm, unity current gain cutoff frequency (fT) of 51 GHz, and maximum frequency of oscillation (fmax) of 115 GHz. At 18 GHz, a continuous-wave output power density of 6.7 W/mm with power-added efficiency of 26.6% was obtained, yielding the highest reported power performance of AlGaN/GaN HEMTs at 18 GHz.
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; 0.25 micron; 18 GHz; 26.6 percent; 6H-SiC substrate; AlGaN-GaN; AlGaN/GaN high electron mobility transistor; MOCVD growth; SiC; continuous-wave output power density; drain current density; extrinsic transconductance; maximum frequency of oscillation; microwave power density; power-added efficiency; unity current gain cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030985
