Title :
Low temperature grown poly-SiGe thin film by Au metal-induced lateral crystallisation (MILC) with fast MILC growth rate
Author :
Chen, S.F. ; Fang, Y.K. ; Wang, W.D. ; Lin, C.Y. ; Lin, C.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A report is presented of the growth of poly-SiGe thin films by gold (Au) metal-induced lateral crystallisation (MILC) technology under various conditions. The MILC growth rate induced by Au is high and can attain 15.1-22.8 μm/h under 500°C annealing. The rate is much faster than the conventional metal-induced solid-phase crystallisation with Ni. Additionally, the annealing temperature can be lowered to 450°C. The Au-MILC process possesses potential application for fabrication of low cost and high response poly-SiGe transistors on glass substrates.
Keywords :
Ge-Si alloys; X-ray diffraction; gold; recrystallisation annealing; semiconductor growth; semiconductor materials; semiconductor thin films; thin film transistors; 450 C; 500 C; Au metal-induced lateral crystallisation; SiGe-Au; X-ray diffraction spectra; annealing temperature; fast MILC growth rate; glass substrate; low cost high response poly-SiGe transistors; low temperature grown poly-SiGe thin film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031035
