Title :
Surface stability of InGaN-channel based HFETs
Author :
Neuburger, M. ; Daumiller, I. ; Zimmermann, T. ; Kunze, M. ; Koley, G. ; Spencer, M.G. ; Dadgar, A. ; Krtschil, A. ; Krost, A. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany
Abstract :
Kelvin probe microscopy in switching experiments was used to measure transients in the relative surface potential of GaN/InGaN/GaN-channel FETs to identify charge build-up at the surface between gate and drain. In contrast to conventional AlGaN/GaN-FETs the surface potential remains unchanged under the switching conditions employed. This is in agreement with the absence of the current and power slump effect in InGaN-channel devices. The reasons for the different behaviour to AlGaN/GaN FET structures are discussed.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; junction gate field effect transistors; surface potential; GaN-InGaN-GaN; InGaN-channel HFET; Kelvin probe microscopy; surface charge build-up; surface potential; surface stability; switching transient;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030974
