Title :
Fundamental-transverse-mode high-power AlGaInP laser diode with windows grown on facets
Author :
Watanabe, Masanori ; Tani, Kentaro ; Takahashi, Kosei ; Sasaki, Kazuaki ; Nakatsu, Hiroshi ; Hosoda, Masahiro ; Matsui, Sadayoshi ; Yamamoto, Osamu ; Yamamoto, Saburo
Author_Institution :
Central Res. Labs., Sharp Corp., Nara, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
The window-grown-on-facet (WGF) structure was first implemented to high power fundamental-transverse-mode AlGaInP lasers so as to reduce facet degradation. A kink-free CW maximum output power of 295 mW, about twice as much as for an identical non-WGF laser, was achieved at the wavelength of 680 mm; and fundamental-transverse-mode operation up to 150 mW was confirmed. Front and rear window layers are undoped (Al0.7Ga0.3)0.5In0.5P grown by MOCVD, while the internal laser was grown by solid-source MBE. The effect of the regrowth of the window layer was evaluated by time-resolved photoluminescence, and a threefold improvement in photoluminescence decay time was observed
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser accessories; laser beams; laser modes; molecular beam epitaxial growth; optical fabrication; optical windows; photoluminescence; semiconductor lasers; time resolved spectra; vapour phase epitaxial growth; (Al0.7Ga0.3)0.5In0.5P; 150 mW; 295 mW; 680 nm; AlGaInP; MOCVD; facet degradation; fundamental-transverse-mode high-power laser; fundamental-transverse-mode operation; internal laser; kink-free CW maximum output power; laser diode; photoluminescence decay time; solid-source MBE; time-resolved photoluminescence; window layer; window layers; window-grown-on-facet structure; Chemical lasers; Degradation; Diode lasers; Laser modes; MOCVD; Molecular beam epitaxial growth; Power lasers; Solid lasers; Temperature; Waveguide lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401264
