• DocumentCode
    822892
  • Title

    23 cm long Bi2O3-based EDFA for picosecond pulse amplification with 80 nm gain bandwidth

  • Author

    Sotobayashi, H. ; Gopinath, J.T. ; Ippen, E.P.

  • Author_Institution
    Res. Lab. of Electron., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • Volume
    39
  • Issue
    19
  • fYear
    2003
  • Firstpage
    1374
  • Lastpage
    1375
  • Abstract
    Amplification of a 1 ps pulse train in a 22.7 cm Bismuth oxide (Bi2O3)-based erbium doped fibre amplifier (EDFA) is reported. An amplification bandwidth of 80 nm, from 1520 to 1600 nm is demonstrated. Because of the short length, amplification of picosecond pulses is achieved without pulse broadening over a wide wavelength range.
  • Keywords
    bismuth compounds; erbium; optical communication equipment; optical fibre amplifiers; wavelength division multiplexing; 1520 to 1600 nm; 22.7 to 23 cm; Bi2O3-based EDFA; Bi2O3:Er; C-band; Er doped fibre amplifier; L-band; WDM signals; picosecond pulse amplification; ultrahigh capacity photonic networks; wavelength division multiplexing signals;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030877
  • Filename
    1244150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=822892