Title :
23 cm long Bi2O3-based EDFA for picosecond pulse amplification with 80 nm gain bandwidth
Author :
Sotobayashi, H. ; Gopinath, J.T. ; Ippen, E.P.
Author_Institution :
Res. Lab. of Electron., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
Amplification of a 1 ps pulse train in a 22.7 cm Bismuth oxide (Bi2O3)-based erbium doped fibre amplifier (EDFA) is reported. An amplification bandwidth of 80 nm, from 1520 to 1600 nm is demonstrated. Because of the short length, amplification of picosecond pulses is achieved without pulse broadening over a wide wavelength range.
Keywords :
bismuth compounds; erbium; optical communication equipment; optical fibre amplifiers; wavelength division multiplexing; 1520 to 1600 nm; 22.7 to 23 cm; Bi2O3-based EDFA; Bi2O3:Er; C-band; Er doped fibre amplifier; L-band; WDM signals; picosecond pulse amplification; ultrahigh capacity photonic networks; wavelength division multiplexing signals;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030877
