Smart TDI readout circuit for long-wavelength IR detector

Author

Kim, Byunghyuk ; Lee, Hee Chul

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., KAIST, Taejon, South Korea

Volume

38

Issue

16

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

854

Lastpage

855

Abstract

A smart time delay and integration (TDI) readout circuit is suggested which performs background suppression, cell-to-cell non-uniformity compensation, and dead pixel correction. Using the smart TDI readout circuit, the integration capacitor area occupying almost the whole area of a unit-cell can be reduced to one-fifth and transimpedance gain can increase by five times. From measurement results, it is found that the skimming current error for a few hundred nA background current is < 1.25 nA corresponding to LSB/2 of ADC and the non-uniformity introduced by cell-to-cell background current variation is reduced to 1.02 nA

Keywords

analogue-digital conversion; delay circuits; infrared detectors; integrated optoelectronics; leakage currents; readout electronics; ADC outputs; background suppression; buffered direct injection input circuit; cell-to-cell nonuniformity compensation; dead pixel correction; integration capacitor area; junction leakage current; limited small pixel area; long-wavelength IR detector; signal processing circuit; skimming current error; smart TDI readout circuit; transimpedance gain;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020621

Filename

1033806