DocumentCode :
823025
Title :
81.5-85.9 GHz injection-locked frequency divider in 65 nm CMOS
Author :
Cho, L.-C. ; Tsai, K.-H. ; Hung, C.-C. ; Liu, S.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume :
44
Issue :
16
fYear :
2008
Firstpage :
966
Lastpage :
968
Abstract :
An injection-locked frequency divider (ILFD) using the shunt-series inductive peaking technique is proposed. Fabricated in a 65 nm process, the proposed ILFD and a conventional one have the measured locking range of 81.5-85.9 and 71-77.4 GHz, respectively. Compared with the conventional ILFD, the measured free-running frequency of the proposed one is increased by 12.5 . Both ILFDs have core area of 0.036 mm2 and power of 12 mW for a 1.55 V supply without buffers.
Keywords :
CMOS integrated circuits; MIMIC; frequency dividers; CMOS technology; frequency 71 GHz to 77.4 GHz; frequency 81.5 GHz to 85.9 GHz; injection-locked frequency divider; locking range; power 12 mW; shunt-series inductive peaking; size 65 nm; voltage 1.55 V;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20081426
Filename :
4586197
Link To Document :
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