• DocumentCode
    823036
  • Title

    Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs

  • Author

    Zhang, W.-C. ; Wu, N.-J.

  • Author_Institution
    Inst. of Semicond., Chinese Acad. of Sci., Beijing
  • Volume
    44
  • Issue
    16
  • fYear
    2008
  • Firstpage
    968
  • Lastpage
    969
  • Abstract
    A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.
  • Keywords
    CMOS integrated circuits; SPICE; nanotechnology; CMOS voltage-mode multivalued literal gate; HSPICE; nanoscale ballistic MOSFET; nanoscale multi-valued circuits; power dissipations; transistors; universal radix-4 literal operations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080507
  • Filename
    4586198
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=823036