Title :
Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs
Author :
Zhang, W.-C. ; Wu, N.-J.
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.
Keywords :
CMOS integrated circuits; SPICE; nanotechnology; CMOS voltage-mode multivalued literal gate; HSPICE; nanoscale ballistic MOSFET; nanoscale multi-valued circuits; power dissipations; transistors; universal radix-4 literal operations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080507
