Title :
Wave-breaking on CMOS interconnect
Author :
Chai, T.C. ; Lister, K.A. ; Curnming, D.R.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
8/1/2002 12:00:00 AM
Abstract :
Nonlinear transmission lines exhibit negative dispersion that can give rise to wave-breaking and pulse shaping behaviour that is of practical use in high-speed electronics. Here, a silicon interconnect design incorporating a high degree of nonlinearity that is capable of producing wave-breaking, is demonstrated. Such nonlinear interconnect could be valuable in distributing ultrafast clock signals across lossy silicon substrates
Keywords :
CMOS integrated circuits; high-speed integrated circuits; integrated circuit design; integrated circuit interconnections; CMOS; Si; high-speed electronics; interconnect design; negative dispersion; nonlinear transmission lines; pulse shaping behaviour; ultrafast clock signals; wave-breaking behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020620
