Title :
High-performance vertical-cavity surface-emitting lasers with emission wavelength between 650 and 670 nm
Author :
Knigge, A. ; Zorn, M. ; Weyers, M. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
fDate :
8/1/2002 12:00:00 AM
Abstract :
Record-high continuous-wave room temperature output powers of 4.3 mW at 650 nm and 10 mW at 670 nm have been achieved from oxide-confined AlGaInP/AlGaAs vertical-cavity surface-emitting lasers. Devices with small current apertures operate up to temperatures of 65°C (650 nm) and 86°C (670 nm) at reduced output powers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; quantum well lasers; surface emitting lasers; 65 C; 650 to 670 nm; 86 C; AlGaInP-AlGaAs; compressively strained quantum wells; continuous-wave room temperature output; high-performance lasers; oxide-confined lasers; small bandgap discontinuities; small current apertures; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020645
