Enhancing circuit design flexibility with argon implanted polysilicon resistor

Author

Lin, C.S. ; Fang, Y.K. ; Chen, S.F. ; Lin, C.Y. ; Hsieh, M.C. ; Hsu, Y.L. ; Hsu, S.-L.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

39

Issue

19

fYear

2003

Firstpage

1409

Lastpage

1411

Abstract

An argon implanted polysilicon thin-film resistor is proposed to raise the sheet resistance and preserve the original electrical characteristics of a resistor for high voltage CMOS technology applications. The experiment results indicate the resistance can be raised by almost two times in magnitude while the voltage coefficient of resistance (VCR) and temperature coefficient of resistance (TCR) are shifted by only 7% and 11% at maximum, respectively. The technology offers potential applications for enhancing flexible circuit design in high voltage CMOS technology.

Keywords

CMOS integrated circuits; argon; electric resistance; elemental semiconductors; integrated circuit design; ion implantation; power integrated circuits; silicon; thin film resistors; Ar implanted polysilicon resistor; HV CMOS technology applications; Si:Ar; TCR; VCR; circuit design flexibility enhancement; high voltage CMOS; polysilicon thin-film resistor; sheet resistance; temperature coefficient of resistance; voltage coefficient of resistance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030883

Filename

1244173