Title :
Gallium-arsenide deep-level PIN tunnel diode with very negative conductance
Author :
Pan, J.L. ; McManis, J.E. ; Grober, L. ; Woodall, J.M.
Author_Institution :
Yale Univ., New Haven, CT, USA
Abstract :
The first tunnel diodes utilising deep levels in low-temperature-grown gallium arsenide (GaAs) are demonstrated. At room temperature, the negative conductance per area of 1/1.2 kΩ μm2 is the largest ever measured in GaAs tunnel diodes, which also show peak-to-valley current ratios as high as 19 and peaks of 1.6 kA/cm2.
Keywords :
III-V semiconductors; deep levels; gallium arsenide; p-i-n diodes; submillimetre wave diodes; tunnel diodes; GaAs; GaAs p-i-n tunnel diode; deep-level PIN tunnel diode; low-temperature-grown GaAs; negative conductance; peak-to-valley current ratios;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030895
