• DocumentCode
    823166
  • Title

    Gallium-arsenide deep-level PIN tunnel diode with very negative conductance

  • Author

    Pan, J.L. ; McManis, J.E. ; Grober, L. ; Woodall, J.M.

  • Author_Institution
    Yale Univ., New Haven, CT, USA
  • Volume
    39
  • Issue
    19
  • fYear
    2003
  • Firstpage
    1411
  • Lastpage
    1412
  • Abstract
    The first tunnel diodes utilising deep levels in low-temperature-grown gallium arsenide (GaAs) are demonstrated. At room temperature, the negative conductance per area of 1/1.2 kΩ μm2 is the largest ever measured in GaAs tunnel diodes, which also show peak-to-valley current ratios as high as 19 and peaks of 1.6 kA/cm2.
  • Keywords
    III-V semiconductors; deep levels; gallium arsenide; p-i-n diodes; submillimetre wave diodes; tunnel diodes; GaAs; GaAs p-i-n tunnel diode; deep-level PIN tunnel diode; low-temperature-grown GaAs; negative conductance; peak-to-valley current ratios;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030895
  • Filename
    1244174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=823166