Title :
Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer
Author :
Lin, Zhaojun ; Lu, Wu ; Lee, Jaesun ; Liu, Dongmin ; Flynn, J.S. ; Brandes, G.R.
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
The influence of annealed ohmic contact metals on the polarisation of the AlGaN barrier layer has been investigated by the Schottky contacts on the AlGaN/GaN HFET structure. The analysed result shows that annealed ohmic contact metals weaken the polarisation of the AlGaN barrier layer. When ohmic contact metals are close to Schottky contact metals, the weakened polarisation decreases the 2DEG sheet carrier concentration in the channel.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; carrier density; gallium compounds; microwave field effect transistors; microwave power transistors; ohmic contacts; polarisation; power field effect transistors; semiconductor device metallisation; semiconductor-metal boundaries; two-dimensional electron gas; wide band gap semiconductors; 2DEG sheet carrier concentration; AlGaN barrier layer polarisation; AlGaN-GaN; AlGaN/GaN HFET structure; Schottky contacts; annealed ohmic contact metals;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030890
