Title :
Reduced cell pitch and on-resistance of trench MOSFET by employing source on trench sidewall
Author :
Park, Il-Yong ; Kim, Sang-Gi ; Koo, Jin-Gun ; Kim, Jongdae
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
Novel structures for fabricating highly dense trench MOSFETs are proposed. The source region is formed on the trench sidewall by using self-aligned process techniques including three-step trench etching. The simulated breakdown voltage and the on-resistance for a cell pitch of 1.0 μm are 45 V and 12.9 mΩ·mm2, respectively.
Keywords :
etching; power MOSFET; semiconductor device breakdown; 1.0 micron; 45 V; breakdown voltage; cell pitch reduction; highly dense trench MOSFETs; on-resistance reduction; self-aligned process techniques; source on trench sidewall; three-step trench etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030885
