Title :
Data transmission using GaAs-based InAs-InGaAs quantum dot LEDs emitting at 1.3 μm wavelength
Author :
Kicherer, M. ; Fiore, A. ; Oesterle, U. ; Stanley, R.P. ; Ilegems, M. ; Michalzik, Rainer
Author_Institution :
Dept. of Optoelectronics, Ulm Univ.
fDate :
8/1/2002 12:00:00 AM
Abstract :
Vertical emission light-emitting diodes (LEDs), based on long-wavelength, self-assembled InAs-InGaAs quantum dots (QDs) grown on a GaAs substrate, are used to demonstrate up to 1 Gbit/s digital data transmission. The devices are characterised in terms of small-signal modulation, showing bandwidths beyond 1 GHz
Keywords :
III-V semiconductors; data communication equipment; gallium arsenide; indium compounds; light emitting diodes; optical communication equipment; optical links; quantum well devices; semiconductor quantum dots; 1 GHz; 1 Gbit/s; 1.3 micron; GaAs; GaAs substrate; GaAs-based LEDs; InAs-InGaAs; InAs-InGaAs quantum dots; digital data transmission; light-emitting diodes; long-wavelength quantum dots; low-cost sources; self-assembled quantum dots; short-distance optical links; small-signal modulation; vertical emission LEDs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020646
