• DocumentCode
    823429
  • Title

    Charge pumping in Sc2O3/GaN gated MOS diodes

  • Author

    Kim, J. ; Mehandru, R. ; Luo, E. ; Ren, E. ; Gila, B.P. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Irokawa, Y.

  • Author_Institution
    Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    38
  • Issue
    16
  • fYear
    2002
  • fDate
    8/1/2002 12:00:00 AM
  • Firstpage
    920
  • Lastpage
    921
  • Abstract
    The total surface state density was measured in n+p gate-controlled Sc2O3/p-GaN diodes using the charge pumping technique. For MBE deposition of Sc2O3 at 650°C onto a p-GaN layer with hole density 2 × 10 17 cm-3 at 25°C, the total surface state density was 3 × 1012 cm-2 after implant activation annealing to form the n+ source and drain regions
  • Keywords
    III-V semiconductors; MIS devices; annealing; gallium compounds; hole density; ion implantation; molecular beam epitaxial growth; scandium compounds; surface states; wide band gap semiconductors; 25 degC; 650 degC; MBE deposition; Sc2O3-GaN; Sc2O3/GaN gated MOS diode; charge pumping; hole density; implant activation annealing; surface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020639
  • Filename
    1033850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=823429