Title :
Charge pumping in Sc2O3/GaN gated MOS diodes
Author :
Kim, J. ; Mehandru, R. ; Luo, E. ; Ren, E. ; Gila, B.P. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Irokawa, Y.
Author_Institution :
Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
fDate :
8/1/2002 12:00:00 AM
Abstract :
The total surface state density was measured in n+p gate-controlled Sc2O3/p-GaN diodes using the charge pumping technique. For MBE deposition of Sc2O3 at 650°C onto a p-GaN layer with hole density 2 × 10 17 cm-3 at 25°C, the total surface state density was 3 × 1012 cm-2 after implant activation annealing to form the n+ source and drain regions
Keywords :
III-V semiconductors; MIS devices; annealing; gallium compounds; hole density; ion implantation; molecular beam epitaxial growth; scandium compounds; surface states; wide band gap semiconductors; 25 degC; 650 degC; MBE deposition; Sc2O3-GaN; Sc2O3/GaN gated MOS diode; charge pumping; hole density; implant activation annealing; surface state density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020639
