Title :
State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs
Author :
Lee, C. ; Wang, H. ; Yang, J. ; Witkowski, L. ; Muir, M. ; Khan, M.A. ; Saunier, P.
Author_Institution :
TriQuint Semicond. Texas, Richardson, TX, USA
fDate :
8/1/2002 12:00:00 AM
Abstract :
The DC and microwave power performance of metal organic chemical vapour deposition-grown AlGaN/GaN HEMTs on SiC substrate is reported. The devices exhibited high maximum current density of 1.1 A/mm with high peak extrinsic transconductance of 234 mS/mm. At 26 GHz, the devices achieved continuous-wave (CW) power density of 5 W/mm with power-added-efficiency of 30.1%, which represents the highest output power density and associated power-added efficiency reported above 20 GHz
Keywords :
aluminium compounds; current density; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; silicon compounds; wide band gap semiconductors; 234 mS/mm; 26 GHz; 30.1 percent; AlGaN-GaN-SiC; AlGaN/GaN; CW power density; HEMTs; SiC; maximum current density; microwave power performance; output power density; peak extrinsic transconductance; power-added-efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020603
