DocumentCode
823468
Title
Ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping
Author
Jung, Eun Sik ; Bea, Ji Chel ; Lee, Young Jae
Author_Institution
Dept. of Electron. Eng., Dongeui Univ., Busan, South Korea
Volume
38
Issue
16
fYear
2002
fDate
8/1/2002 12:00:00 AM
Firstpage
926
Lastpage
927
Abstract
A novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension region is described. A new ultra-shallow junction formation technology, which is based on a damage-free process for replacing low energy ion implantation, is realised using ultra-high vacuum chemical vapour deposition and excimer laser annealing
Keywords
Ge-Si alloys; MOSFET; chemical vapour deposition; laser beam annealing; semiconductor doping; semiconductor materials; NMOSFET; SiGe; damage-free process; elevated SiGe source/drain; excimer laser annealing; laser-induced atomic layer doping; ultra-high vacuum chemical vapour deposition; ultra-shallow junction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020512
Filename
1033854
Link To Document