DocumentCode
823598
Title
Bloch line propagation with Co-Pt bit patterns in stripe domains confined by grooves
Author
Fujimoto, Kazuhisa ; Maruyama, Yooji ; Suzuki, Ryo
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
28
Issue
6
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
3350
Lastpage
3354
Abstract
Bloch Line (BL) pair propagation using a field-access scheme has been investigated in the straight pair of stripe domains stabilized around completely etched grooves. Potential wells to define the bit position for the BL pairs were produced by the stray field from Co-Pt thin-film patterns with high coercivity. By applying a series of asymmetric triangular bias pulsed fields, a BL pair was propagated at 500 kHz with a 14% bias field margin. At 1 MHz, however, the bias field margin was only 7%. This reduction was due to the long relaxation time of the domain walls. The drive field margins depended on the orientation of the propagation direction relative to the magnetized direction of the Co-Pt bit patterns. This dependence became small when the in-plane bias field was decreased
Keywords
Bloch line memories; cobalt alloys; ferromagnetic properties of substances; magnetic domain walls; magnetic thin films; platinum alloys; (YSmLuCa)3(FeGa)5O12; 1 MHz; 500 kHz; Bloch line memory; Bloch line propagation; Co-Pt thin film bit patterns; Co/Pt magnetic films; YSmLuCaFe5O12Ga5O12; YSmLuCaIGGG; asymmetric triangular bias pulsed fields; bubble garnet films; confined by grooves; domain walls; field-access scheme; long relaxation time; stripe domains; Anisotropic magnetoresistance; Energy consumption; Etching; Garnet films; Gyrotropism; Magnetic fields; Memory; Potential well; Shape; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.179809
Filename
179809
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