DocumentCode :
823720
Title :
Theoretical calculations and performance results of a PZT thin film actuator
Author :
Hoffmann, Marcus ; Kuppers, H. ; Schneller, Theodor ; Bottger, Ulrich ; Schnakenberg, Uwe ; Mokwa, Wilfried ; Waser, Rainer
Author_Institution :
Electroceramic Mater. Res. Labs., RWTH, Aachen, Germany
Volume :
50
Issue :
10
fYear :
2003
Firstpage :
1240
Lastpage :
1246
Abstract :
High piezoelectric coupling coefficients of PZT-based material systems can be employed for actuator functions in micro-electro-mechanical systems (MEMS) offering displacements and forces which outperform standard solutions. This paper presents simulation, fabrication, and development results of a stress-compensated, PZT-coated cantilever concept in which a silicon bulk micromachining process is used in combination with a chemical solution deposition (CSD) technique. Due to an analytical approach and a finite element method (FEM) simulation for a tip displacement of 10 /spl mu/m, the actuator was designed with a cantilever length of 300 /spl mu/m to 1000 /spl mu/m. Special attention was given to the Zr/Ti ratio of the PZT thin films to obtain a high piezoelectric coefficient. For first characterizations X-ray diffraction (XRD), scanning electron microscopy (SEM), hysteresis-, current-voltage I(V)and capacitance-voltage C(V)-measurements were carried out.
Keywords :
X-ray diffraction; finite element analysis; lead compounds; liquid phase deposited coatings; microactuators; micromachining; piezoelectric actuators; piezoelectric thin films; scanning electron microscopy; MEMS cantilever; PZT; PZT thin film actuator; PbZrO3TiO3; Si; X-ray diffraction; capacitance-voltage characteristics; chemical solution deposition; current-voltage characteristics; finite element method; hysteresis; piezoelectric coupling coefficient; scanning electron microscopy; silicon bulk micromachining; stress compensation; Fabrication; Microelectromechanical systems; Micromachining; Micromechanical devices; Piezoelectric actuators; Piezoelectric films; Piezoelectric materials; Scanning electron microscopy; Silicon; Transistors;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2003.1244739
Filename :
1244739
Link To Document :
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