MIS slow-wave structures over a wide range of parameters

Author

Gilb, James P K ; Balanis, Constantine A.

Author_Institution

Dept. of Electr. Eng., Telecommun. Res. Center, Arizona State Univ., Tempe, AZ, USA

Volume

40

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2148

Lastpage

2154

Abstract

Lossy multilayer, multiconductor MIS microstrip structures are analyzed with the spectral-domain approach over a wide range of frequency and substrate loss. The modal attenuation and propagation constants are presented for two- and four-conductor structures as a function of the substrate loss tangent. Single-conductor structures are characterized with contour plots showing the complex effective dielectric constant as a function of both frequency and conductivity. MIS slow-wave structures are analyzed for both Si-SiO₂ and GaAs configurations

Keywords

MMIC; dielectric losses; metal-insulator-semiconductor structures; microstrip components; permittivity; spectral-domain analysis; waveguide theory; GaAs; MIS slow-wave structures; MMIC; Si-SiO₂; complex effective dielectric constant; conductivity; contour plots; four-conductor structures; frequency; lossy multilayer structures; microstrip structures; modal attenuation; multiconductor; propagation constants; single-conductor structure; spectral-domain approach; substrate loss tangent; two-conductor structure; Attenuation; Conductivity; Dielectric constant; Dielectric substrates; Frequency; Gallium arsenide; Microstrip; Nonhomogeneous media; Propagation constant; Propagation losses;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.179875

Filename

179875