Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits

Author

Martinie, Sébastien ; Le Carval, Gilles ; Munteanu, Daniela ; Soliveres, S. ; Autran, Jean-Luc

Author_Institution

CEA-LETI, MINATEC, Grenoble

Volume

55

Issue

9

fYear

2008

Firstpage

2443

Lastpage

2453

Abstract

A drift-diffusion-like formulation for including ballistic and quasi-ballistic transport in the simulation of double-gate MOSFETs has been implemented in a technology computer-aided design (TCAD) simulator. This model is based on a description of the quasi-ballistic mobility through a dynamical description of the mean free path. The model has been validated by comparison with experimental data and Monte Carlo simulation. In addition, several circuit elements (CMOS inverter, powerless XOR gate, and ring oscillator) have been simulated in the TCAD environment, illustrating the impact of ballistic and quasi-ballistic transport on static and transient performances at the circuit level.

Keywords

MOSFET circuits; Monte Carlo methods; ballistic transport; circuit CAD; technology CAD (electronics); Monte Carlo simulation; circuit level; double gate MOSFET circuits; drift diffusion like formulation; dynamical description; mean free path; quasi ballistic transport; technology computer aided design simulator; Ballistic transport; CMOS technology; Circuit simulation; Computational modeling; Computer simulation; Equations; Laboratories; MOSFETs; Microelectronics; Semiconductor device modeling; Ballistic transport; CMOS inverter; double-gate MOSFETs (DGMOS); quasi-ballistic transport; ring oscillator; technology computer-aided design (TCAD);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.927656

Filename

4586411