New approach to GaAs MESFET analog frequency dividers with low threshold input power and high conversion gain

Author

Amine, Hicham ; Llopis, Olivier ; Gayral, Michel ; Graffeuil, Jacques ; Sautereau, Jean Francois

Author_Institution

LAAS-CNRS, Toulouse, France

Volume

40

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2345

Lastpage

2351

Abstract

An approach to frequency dividers based on the nonlinear feedback control of MESFET in the forced oscillation mode is proposed. The input signal is used to control the MESFET gain, imposing oscillation conditions. A design of frequency dividers based on this approach which allows the threshold input power to be reduced and the conversion gain to be increased. is proposed. Frequency division is tested using time-domain simulation. and an X-band experimental MESFET analog frequency divider which exhibits a high conversion gain and a low threshold input power is discussed

Keywords

III-V semiconductors; Schottky gate field effect transistors; feedback; frequency dividers; frequency-domain analysis; gallium arsenide; nonlinear network analysis; solid-state microwave circuits; time-domain analysis; GaAs; MESFET; SHF; X-band; analog frequency dividers; forced oscillation mode; high conversion gain; low threshold input power; nonlinear feedback control; time-domain simulation; Circuit simulation; Circuit testing; Feedback control; Force feedback; Frequency conversion; Gallium arsenide; MESFETs; Phase locked loops; Signal design; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.179900

Filename

179900