Title :
Pseudomorphic inverted HEMT suitable to low supplied voltage application
Author :
Kasashima, Masaaki ; Arai, Yukari ; Fujishiro, Hiroki Inomata ; Nakamura, Hajime ; Nishi, Seiji
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
12/1/1992 12:00:00 AM
Abstract :
An enhancement-mode pseudomorphic inverted HEMT with short gate length shows superior saturation properties at low drain voltage. Such saturation properties are suitable for low-supplied-voltage applications. High-frequency properties of FETs were also studied, using two types of frequency-dependent measurement systems which represent active load and common-source circuits. It was confirmed that low knee voltage in the static I-V curve is preserved above 100 kHz. The estimated output power for the device is 50% higher than that of conventional pseudomorphic HEMT at supplied voltage of 1 V
Keywords :
high electron mobility transistors; semiconductor device testing; solid-state microwave devices; 1 V; LV supply application; active load; common-source circuits; enhancement-mode; frequency-dependent measurement systems; pseudomorphic inverted HEMT; saturation properties; short gate length; static I-V curve; Circuits; FETs; Frequency measurement; Gallium arsenide; HEMTs; Knee; Low voltage; MESFETs; Microwave devices; Radio frequency;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
