Title :
Lifetesting GaAs MMICs under RF stimulus
Author :
Roesch, William J. ; Rubalcava, Tony ; Hanson, Clark
Author_Institution :
TriQuint Semicond., Beaverton, OR, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
Very-high-temperature lifetest results on MMIC switches and attenuators are summarized. It was found that individual heating and RF bias resulted in data which indicate that the devices degrade linearly with lognormal failure distributions that compare favorably with historical DC lifetesting of MMIC amplifiers. Electrical measurements indicated MESFET gate degradation was occurring, which was found to be highly accelerated by temperature. It is not expected that this would impede device lifetimes at normal-use conditions for thousands of years
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; attenuators; circuit reliability; failure analysis; field effect integrated circuits; gallium arsenide; integrated circuit testing; life testing; semiconductor switches; GaAs; MESFET gate degradation; MMIC; RF bias; RF stimulus; attenuators; depletion mode MESFET process; high temperature lifetest; lognormal failure distributions; switches; Attenuators; Degradation; Distributed amplifiers; Electric variables measurement; Gallium arsenide; Heating; MMICs; Radio frequency; Radiofrequency amplifiers; Switches;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
