Lifetesting GaAs MMICs under RF stimulus

Author

Roesch, William J. ; Rubalcava, Tony ; Hanson, Clark

Author_Institution

TriQuint Semicond., Beaverton, OR, USA

Volume

40

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2452

Lastpage

2460

Abstract

Very-high-temperature lifetest results on MMIC switches and attenuators are summarized. It was found that individual heating and RF bias resulted in data which indicate that the devices degrade linearly with lognormal failure distributions that compare favorably with historical DC lifetesting of MMIC amplifiers. Electrical measurements indicated MESFET gate degradation was occurring, which was found to be highly accelerated by temperature. It is not expected that this would impede device lifetimes at normal-use conditions for thousands of years

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; attenuators; circuit reliability; failure analysis; field effect integrated circuits; gallium arsenide; integrated circuit testing; life testing; semiconductor switches; GaAs; MESFET gate degradation; MMIC; RF bias; RF stimulus; attenuators; depletion mode MESFET process; high temperature lifetest; lognormal failure distributions; switches; Attenuators; Degradation; Distributed amplifiers; Electric variables measurement; Gallium arsenide; Heating; MMICs; Radio frequency; Radiofrequency amplifiers; Switches;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.179916

Filename

179916