Title :
New Developments in Defect Studies in Semiconductors
Author_Institution :
Bell Laboratories Murray Hill, New Jersey
Keywords :
Capacitance; Instruments; Scanning electron microscopy; Schottky barriers; Signal processing; Solids; Spectroscopy; Temperature dependence; Transient analysis; Working environment noise;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328529
