Title :
Effect of carrier lifetimes on forward characteristics of MOS-controlled thyristors
Author :
Zeng, J. ; Mawby, P.A. ; Towers, M.S. ; Board, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Coll. of Swansea, UK
fDate :
6/1/1995 12:00:00 AM
Abstract :
The effect of different carrier lifetimes on the forward I-V characteristics of a MOS-controlled thyristor (MCT) has been studied using numerical simulation. Those physical mechanisms that have a strong effect on the forward operation of the MCT have been identified and taken into account. The results show that in the design tradeoff between the switching speed and forward current capability there exists a characteristic lifetime below which the operation mode changes from thyristor-like to IGBT-like, and in the transfer between them a region of differential negative resistance exists
Keywords :
MOS-controlled thyristors; carrier lifetime; negative resistance; semiconductor device models; I-V characteristics; IGBT-like mode; MOS-controlled thyristors; carrier lifetimes; characteristic lifetime; design tradeoff; differential negative resistance; forward characteristics; forward current capability; numerical simulation; operation mode; switching speed; thyristor-like mode;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19951952
