• DocumentCode
    824697
  • Title

    Charge-mixer based on MOS interface-trap charge pump

  • Author

    Massari, N. ; Gottardi, M.

  • Volume
    42
  • Issue
    3
  • fYear
    2006
  • Firstpage
    151
  • Lastpage
    152
  • Abstract
    A 3.3 V charge-mixer device in a 0.35 μm CMOS process detects the intensity and phase of a modulated signal. A two PMOS pair is used as charge-mixer to exploit the interface-trap charge pump phenomenon. Using clocking between accumulation and inversion, the two transistors perform a voltage-to-charge conversion of the input signal and transfer this charge to the two outputs synchronously to the applied signal.
  • Keywords
    CMOS integrated circuits; accumulation layers; charge injection; interface states; inversion layers; mixers (circuits); 0.35 micron; 3.3 V; MOS interface-trap charge pump; PMOS charge mixer; charge mixer device; voltage-to-charge conversion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20064196
  • Filename
    1593297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=824697