DocumentCode :
824697
Title :
Charge-mixer based on MOS interface-trap charge pump
Author :
Massari, N. ; Gottardi, M.
Volume :
42
Issue :
3
fYear :
2006
Firstpage :
151
Lastpage :
152
Abstract :
A 3.3 V charge-mixer device in a 0.35 μm CMOS process detects the intensity and phase of a modulated signal. A two PMOS pair is used as charge-mixer to exploit the interface-trap charge pump phenomenon. Using clocking between accumulation and inversion, the two transistors perform a voltage-to-charge conversion of the input signal and transfer this charge to the two outputs synchronously to the applied signal.
Keywords :
CMOS integrated circuits; accumulation layers; charge injection; interface states; inversion layers; mixers (circuits); 0.35 micron; 3.3 V; MOS interface-trap charge pump; PMOS charge mixer; charge mixer device; voltage-to-charge conversion;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20064196
Filename :
1593297
Link To Document :
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