DocumentCode
824718
Title
Viscous Shear Flow Model for MOS Device Radiation Sensitivity
Author
EerNisse, E.P. ; Derbenwick, G.F.
Author_Institution
Sandia Laboratories, Albuquerque, New Mexico 87115
Volume
23
Issue
6
fYear
1976
Firstpage
1534
Lastpage
1539
Keywords
Annealing; Electron traps; Ionizing radiation; MOS devices; Occupational stress; Oxidation; Process design; Temperature sensors; Thermal stresses; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1976.4328534
Filename
4328534
Link To Document