Title :
Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs
Author :
Bank, S.R. ; Bae, H.P. ; Yuen, H.B. ; Wistey, M.A. ; Goddard, L.L. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab, Stanford Univ., CA, USA
Abstract :
The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; wide band gap semiconductors; 1.55 micron; 130 mW; 20 micron; 200 micron; GaInNAsSb-GaAs; peak output power; room-temperature continuous-wave laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064022
