• DocumentCode
    824806
  • Title

    Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors

  • Author

    Winokur, P.S. ; McGarrity, J.M. ; Boesch, H.E., Jr.

  • Author_Institution
    Harry Diamond Laboratories Adelphi, Maryland 20783
  • Volume
    23
  • Issue
    6
  • fYear
    1976
  • Firstpage
    1580
  • Lastpage
    1585
  • Keywords
    Capacitance-voltage characteristics; Charge carrier processes; Density measurement; Electrodes; Electron traps; Fluctuations; Interface states; Ionizing radiation; MOS capacitors; NIST;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1976.4328543
  • Filename
    4328543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=824806