Title :
2.4 μm cutoff wavelength avalanche photodiode on InP substrate
Author :
Sidhu, R. ; Zhang, L. ; Tan, N. ; Duan, N. ; Campbell, J.C. ; Holmes, A.L., Jr. ; Hsu, C.-F. ; Itzler, M.A.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Texas, Austin, TX, USA
Abstract :
An InP-based avalanche photodiode with a cutoff wavelength of 2.4 μm is reported. Type-II GaInAs-GaAsSb quantum wells lattice-matched to InP were used in the absorption region of the photodiode for long-wavelength absorption. The device exhibited multiplication gain in excess of 30 at room temperature and in excess of 200 at 225 Kelvin with dark current density near breakdown of less than 0.66 mA/cm2.
Keywords :
III-V semiconductors; avalanche photodiodes; current density; gallium arsenide; gallium compounds; indium compounds; photoconductivity; semiconductor device breakdown; semiconductor quantum wells; 2.4 micron; GaInAs-GaAsSb; GaInAs-GaAsSb quantum wells; avalanche photodiode; cutoff wavelength; dark current density; long-wavelength absorption; multiplication gain; semiconductor device breakdown;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20063415
