• DocumentCode
    824913
  • Title

    Transient Radiation Effects in CCD´s

  • Author

    Shedd, W. ; Buchanan, B.

  • Author_Institution
    Rome Air Development Center Deputy for Electronic Technology LG Hanscom AFB, MA. 01731
  • Volume
    23
  • Issue
    6
  • fYear
    1976
  • Firstpage
    1636
  • Lastpage
    1638
  • Abstract
    The response of Charge Coupled Device (CCD) linear shift registers to transient ionizing radiation has been evaluated. Dose rates from 6×104 to 1×107 rads (Si)/sec were used to deliver between .06 and 20 rads per pulse. The measurement techniques used and the response of the CCD register to these exposures is described. The recovery of the CCD to normal operation and the dependence on dose, dose rate and clock frequency is discussed with particular emphasis on the time dependence and mechanism of the device recovery. The practical limitations on CCD applications in an ionizing radiation environment are discussed.
  • Keywords
    Aluminum; Charge coupled devices; Charge-coupled image sensors; Circuit testing; Clocks; Ionizing radiation; Radiation effects; Shift registers; Space technology; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1976.4328554
  • Filename
    4328554