DocumentCode :
824913
Title :
Transient Radiation Effects in CCD´s
Author :
Shedd, W. ; Buchanan, B.
Author_Institution :
Rome Air Development Center Deputy for Electronic Technology LG Hanscom AFB, MA. 01731
Volume :
23
Issue :
6
fYear :
1976
Firstpage :
1636
Lastpage :
1638
Abstract :
The response of Charge Coupled Device (CCD) linear shift registers to transient ionizing radiation has been evaluated. Dose rates from 6×104 to 1×107 rads (Si)/sec were used to deliver between .06 and 20 rads per pulse. The measurement techniques used and the response of the CCD register to these exposures is described. The recovery of the CCD to normal operation and the dependence on dose, dose rate and clock frequency is discussed with particular emphasis on the time dependence and mechanism of the device recovery. The practical limitations on CCD applications in an ionizing radiation environment are discussed.
Keywords :
Aluminum; Charge coupled devices; Charge-coupled image sensors; Circuit testing; Clocks; Ionizing radiation; Radiation effects; Shift registers; Space technology; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1976.4328554
Filename :
4328554
Link To Document :
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