DocumentCode
824913
Title
Transient Radiation Effects in CCD´s
Author
Shedd, W. ; Buchanan, B.
Author_Institution
Rome Air Development Center Deputy for Electronic Technology LG Hanscom AFB, MA. 01731
Volume
23
Issue
6
fYear
1976
Firstpage
1636
Lastpage
1638
Abstract
The response of Charge Coupled Device (CCD) linear shift registers to transient ionizing radiation has been evaluated. Dose rates from 6Ã104 to 1Ã107 rads (Si)/sec were used to deliver between .06 and 20 rads per pulse. The measurement techniques used and the response of the CCD register to these exposures is described. The recovery of the CCD to normal operation and the dependence on dose, dose rate and clock frequency is discussed with particular emphasis on the time dependence and mechanism of the device recovery. The practical limitations on CCD applications in an ionizing radiation environment are discussed.
Keywords
Aluminum; Charge coupled devices; Charge-coupled image sensors; Circuit testing; Clocks; Ionizing radiation; Radiation effects; Shift registers; Space technology; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1976.4328554
Filename
4328554
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